semiconductor group 1 09.96 byp 300 preliminary data fred diode ? fast recovery epitaxial diode ? soft recovery characteristics type v rrm i frms t rr package ordering code byp 300 1200v 6.5a 55ns to-218 ad C67047-A2250-A2 maximum ratings parameter symbol values unit mean forward current t c = 90 c, d = 0.5 i fav 4 a rms forward current i frms 6.5 surge forward current, sine halfwave, aperiodic t j = 100 c, f = 50 hz i fsm 15 repetitive peak forward current t j = 100 c, t p 10 s i frm 40 i 2 t value t j = 100 c, t p = 10 ms i 2 d t 1.1 a 2 s repetitive peak reverse voltage v rrm 1200 v surge peak reverse voltage v rsm 1200 power dissipation t c = 90 c p tot 15 w chip or operating temperature t j -40 ... + 150 c storage temperature t stg -40 ... + 150 thermal resistance, chip case r thjc 3.8 k/w thermal resistance, chip-ambient r thja 46 din humidity category, din 40 040 - e - iec climatic category, din iec 68-1 - 40 / 150 / 56
semiconductor group 2 09.96 byp 300 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics forward voltage drop i f = 4 a, t j = 25 c i f = 4 a, t j = 100 c v f - - 2 2.3 - 3 v reverse current v r = 1200 v, t j = 25 c v r = 1200 v, t j = 100 c v r = 1200 v, t j = 150 c i r - - - 0.15 0.05 0.01 - - 0.25 ma ac characteristics reverse recovery charge i f = 4 a, v cc = 300 v, d i f / d t = -800 a/s t j = 100 c q rr - 0.8 - c peak reverse recovery current i f = 4 a, v cc = 300 v, d i f / d t = -800 a/s t j = 100 c i rrm - 22 - a reverse recovery time i f = 4 a, v cc = 300 v, d i f / d t = -800 a/s t j = 100 c t rr - 55 - ns storage time i f = 4 a, v cc = 300 v, d i f / d t = -800 a/s t j = 100 c t s - 30 - softfaktor i f = 4 a, v cc = 300 v, d i f / d t = -800 a/s t j = 100 c s - 0.8 - -
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